Fabrication of 8K4K organic EL panel using high-mobility IGZO material

摘要

A 13.3-inch 8k4k organic light-emitting diode display based on a newly developed high-mobility indium-gallium-zinc-oxide material was fabricated. It was found that the use of a higher-mobility material decreases the scan driver size and power consumption. Furthermore, such oxide semiconductor layers with a buried channel structure can increase process stability and reliability.