Novel 4T1C pixel circuit for high image quality OLEDoS microdisplays

摘要

A novel pixel circuit with a bulk-driven technique is proposed for high image quality organic light-emitting diode-on-silicon (OLEDoS) microdisplays. The proposed pixel circuit based on bulk-driven technique achieves a wide input voltage range and nanoampere (nA) emission current. The experiment results based on the 0.18 mu m 1P5M CMOS process is demonstrated. The input data voltage width of the proposed circuit is approximately 2.6 V. The ratio of the input voltage range to the supply voltage based on bulk-driven 4T1C is 78.82%.