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A Simple Pixel Circuit for Ultra High Resolution Active Matrix OLED-on-Silicon (OLEDoS) Microdisplays with Highly Uniform Luminance

机译:用于具有高均匀亮度的超高分辨率有源矩阵硅上OLED(OLEDoS)微显示器的简单像素电路

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摘要

In this paper, a simple pixel circuit is proposed for the high resolution organic light emitting diode-on-silicon (OLEDoS) microdisplay. The proposed pixel circuit achieves a wide input data voltage range using the body effect and suppresses the emission current deviation due to the threshold voltage variation of the driving transistor using the capacitive coupling effect. The proposed pixel circuit which consists of three n-type MOSFETs and one storage capacitor occupies an area of 3 μm × 9 μm. The simulated results show that the proposed pixel circuit achieves maximum input data voltage ranges of 1.37 V, 1.51 V, and 1.34 V for red, green, and blue OLED, respectively, from 1-gray to 255-gray level, and the emission current error ranges from -2.85% to +2.96% under the threshold voltage variation of ±5 mV.
机译:本文提出了一种用于高分辨率有机硅发光二极管(OLEDoS)微型显示器的简单像素电路。提出的像素电路利用体效应实现了宽的输入数据电压范围,并利用电容耦合效应抑制了由于驱动晶体管的阈值电压变化引起的发射电流偏差。所提出的像素电路由3个n型MOSFET和一个存储电容器组成,其面积为3μm×9μm。仿真结果表明,对于红色,绿色和蓝色OLED,从1灰阶到255灰阶,所提出的像素电路可实现的最大输入数据电压范围分别为1.37 V,1.51 V和1.34 V,并且发射电流在±5 mV的阈值电压变化下,误差范围为-2.85%至+ 2.96%。

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