Effect of Si addition to thin-film SnO_2 microbattery anodes on cycling performance

摘要

Thin-film SnO_2 and Si-doped SnO_2 microbattery anodes are deposited on a Mo/Si substrate by e-beam evaporator at room temperature. The deposited film are characterized by energy dispersion X-ray spectroscopy (EDS), X-ray diffraction (XRD), field-emission scanning Electron microscopy (FESEM), atomic force microscopy (AFM), and transmission election microscopy (TEM). Constant-current Galvanostatic charge-discharge tests of half cells are performed.