X-Ray Reflectivity Study of Formation of Multilayer Porous Anodic Oxides of Silicon

摘要

Present work reports a study of the morphology of thin(50-600 A) porous oxides of silicom grownin a special regime of the oscillating anodic potential.X-ray reflectivity (in-situ and ex-situ) was applied to analyze the morphology of oxides. It has been established that there is a direct correlation between a number of oscillations of potential duringt the oside growth and the structreof oxide:it has a multi-layer structure with the number of layers corresponding to the number of oscillations. The results are interpreted using the model of the porous structures formation which explains the oscillatory oside formation kinetics in terms of alternating processes of oxide formation and dissolutio.