X-ray reflectivity study of formation of multilayer porous anodic oxides of211 silicon

摘要

The paper reports data on the kinetics of anodic oxide films growth on silicon in211u001eaqueous solutions of phosphoric acids as well as a study of the morphology of the 211u001eoxides grown in a special regime of the oscillating anodic potential. X-ray 211u001ereflectivity measurements were performed on the samples of anodic oxides using an 211u001eintense synchrotron radiation source. They have a multilayer structure as 211u001erevealed by theoretical fitting of the reflectivity data. The oscillations of the 211u001eanodic potential are explained in terms of synchronized oxidation/dissolution 211u001ereactions at the silicon surface and accumulation of mechanic stress in the oxide 211u001efilm.