Fabrication of GaN/InGaN MQW blue light emitting diode

G. Srivani Padma; Sumitra Singh; Manish Mathew; Kuldip Singh; B. C. Joshi; Surjit Das; C. Dhanavantri

首页> 外文期刊>Journal of Optics >Fabrication of GaN/InGaN MQW blue light emitting diode

【24h】

Fabrication of GaN/InGaN MQW blue light emitting diode

机译：GaN / InGaN MQW蓝色发光二极管的制造

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

GaN/InGaN Multiple Quantum Well LED structures were indigenously grown by MOCVD system on c-plane (0001) sapphire substrate. Blue LEDs at chip level were fabricated with various chip sizes. Ⅰ-Ⅴ characteristics were measured for the fabricated chips.

机译：GaN / InGaN多量子阱LED结构通过MOCVD系统在c面（0001）蓝宝石衬底上本地生长。芯片级的蓝色LED可以制造各种尺寸的芯片。测量了所制备芯片的Ⅰ-Ⅴ特性。

著录项

来源
《Journal of Optics》 |2012年第4期|198-200|共3页
作者
G. Srivani Padma; Sumitra Singh; Manish Mathew; Kuldip Singh; B. C. Joshi; Surjit Das; C. Dhanavantri;
展开▼
作者单位

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

Optoelectronic Devices Group, Central Electronics Engineering Research Institute (CEERI), Pilani, 333031 Rajasthan, India;

展开▼
收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
electron beam evaporation; multiple quantum wells; MOCVD; photoluminescence; reactive ion etching;

机译：电子束蒸发多个量子阱;MOCVD;光致发光反应离子蚀刻;
入库时间 2022-08-18 03:00:52

相似文献

外文文献
中文文献
专利

1. Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n~+ -InGaN electron injection layer and a p-InGaN/GaN hole injection layer [J] . Chuanyu Jia, Cantao Zhong, Tongjun Yu, Semiconductor science and technology . 2012,第6期

机译：通过插入n〜+ -InGaN电子注入层和p-InGaN / GaN空穴注入层来改善InGaN / GaN MQWs发光二极管的静电放电特性
2. Fabrication Of Asymmetric Gan/inn/ingan/gan Quantum-well Light Emitting Diodes For Reducing The Quantum-confined Stark Effect In The Blue-green Region [J] . Songbek Che, Akihiko Yuki, Hiroshi Watanabe, Applied physics express . 2009,第2期

机译：用于降低蓝绿色区域中量子受限斯塔克效应的不对称Gan / inn / ingan / gan量子阱发光二极管的制备
3. Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode [J] . Min Guo, Zhi-You Guo, Jing Huang, 中国物理：英文版 . 2017,第002期

机译：基于GaN / InGaN / AlGaN / InGaN / GaN的梯度成分的InGaN基蓝色发光二极管的载流子分布改善
4. Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate [C] . Singh Kuldip, Chauhan Ashok, Joshi Sonam, International Conference on Microwave and Photonics . 2013

机译：蓝宝石衬底上InGaN / GaN MQWs蓝色发光二极管的制备与表征
5. Optical characterization of inhomogeneities in blue-emitting InGaN/GaN MQWs. [D] . Li, Cheng. 2014

机译：发射蓝光的InGaN / GaN MQW中不均匀性的光学表征。
6. Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate [O] . Moonsang Lee, Hyunkyu Lee, Keun Man Song, 2018

机译：从硅衬底上分离出来的独立式GaN上的InGaN / GaN蓝色发光二极管的正向隧穿特性研究
7. Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates [O] . Bin Liu, Ping Han, Zili Xie, 2010

机译：在LiAlO2（100）衬底上制造蓝色和绿色非极性InGaN / GaN多量子阱发光二极管

Fabrication of GaN/InGaN MQW blue light emitting diode

摘要

著录项

相似文献

相关主题

期刊订阅