Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by InkJet Printing

摘要

We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol) (PVP) matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm~2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.