...
机译:新的不透明MoSi二元掩膜空白的32纳米节点及更高的光刻资格
IBM Advanced Lithography Research Albany Nanotech Albany, New York 12203;
rnIBM Photomask Development Essex Junction, Vermont 05452;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Advanced Lithography Research Albany Nanotech Albany, New York 12203;
rnIBM Photomask Development Essex Junction, Vermont 05452;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnIBM Semiconductor Research and Development Fishkill, New York 12533;
rnToppan Photomasks, Inc. 1000 River Street Essex Junction, Vermont 05452;
binary mask blank; opaque mosi on glass (OMOG); 32-nm and 32-nm-node mask blank choice; electromagnetic effects;
机译:新的不透明MoSi二元掩膜空白的32纳米节点及更高的光刻资格
机译:使用无定形Al_2O_3-ZrO_2-SiO_2复合薄膜的ArF线高透射率衰减相移掩模坯料,用于65、45和32 nm技术节点
机译:矢量衍射效应对二元掩模光学光刻图像与投影系统放大率的相关性
机译:10nm及以上节点的高透射掩模空白的光刻资格
机译:电子束投影光刻掩模系统在曝光期间的热机械变形。
机译:二元和三元MoSi2 / Mo5Si3共晶复合材料定向凝固铸锭的塑性变形
机译:EUVL掩模空白缺陷对32-NM HP节点的可检测性和可打印性