首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Novel multicontact radio frequency microelectromechanical system switch in high-power-handling applications
【24h】

Novel multicontact radio frequency microelectromechanical system switch in high-power-handling applications

机译:大功率处理应用中的新型多触点射频微机电系统开关

获取原文
获取原文并翻译 | 示例
           

摘要

We report a novel multicontact radio frequency (RF) micro-electromechanical system (MEMS) switch with mechanical independent switch elements and microspring contacts. The consistent contact arrangement and the robust contact design can effectively increase the contact area, reduce the current density, and therefore improve the power-/current-handling capability. The working mechanism of the switch with microspring contact is investigated by CoventorWare® simulation tools. The switch, fabricated by the Cu-Ni dual-metallic-sacrificial-layer surface micromachining, is actuated at 55 V for characterization. The closing time is 11 μs, and the opening time is 13.5 μs. The isolation is -30.9 dB at 2 GHz and -11.5 dB at 20 GHz; the insertion loss is -0.12 dB at 2 GHz and -0.22 dB at 20 GHz. The contact metal is Pt-Au, and the measured switch resistance drops from 48 to 1.2 Ω when the actuation voltage increases from 40 to 65 V. The switch element handles a current of 300 mA at 0.1 Hz. The switch is an excellent candidate for microwave applications requiring high-power handling.
机译:我们报告了一种新型的多触点射频(RF)微机电系统(MEMS)开关,具有机械独立的开关元件和微弹簧触点。一致的触点布置和坚固的触点设计可以有效地增加触点面积,降低电流密度,从而提高功率/电流处理能力。通过CoventorWare®仿真工具研究了带有微弹簧触点的开关的工作机理。由Cu-Ni双金属牺牲层表面微机械加工制成的开关在55 V时被驱动以进行表征。关闭时间为11μs,打开时间为13.5μs。隔离度在2 GHz时为-30.9 dB,在20 GHz时为-11.5 dB;在2 GHz时插入损耗为-0.12 dB,在20 GHz时插入损耗为-0.22 dB。接触金属为Pt-Au,当驱动电压从40 V增加到65 V时,测得的开关电阻从48降至1.2Ω。开关元件在0.1 Hz的电流下处理300 mA的电流。该开关非常适合需要大功率处理的微波应用。

著录项

  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2011年第1期|p.011505.1-011505.9|共9页
  • 作者单位

    Peking University Institute of Microelectronics National Key Laboratory of Science Technology on Micro/Nano Fabrication Cheng Fu Road, Haidian District Beijing 100871 China;

    Peking University Institute of Microelectronics National Key Laboratory of Science Technology on Micro/Nano Fabrication Cheng Fu Road, Haidian District Beijing 100871 China;

    Peking University Institute of Microelectronics National Key Laboratory of Science Technology on Micro/Nano Fabrication Cheng Fu Road, Haidian District Beijing 100871 China;

    Peking University Institute of Microelectronics National Key Laboratory of Science Technology on Micro/Nano Fabrication Cheng Fu Road, Haidian District Beijing 100871 China;

    Peking University Institute of Microelectronics National Key Laboratory of Science Technology on Micro/Nano Fabrication Cheng Fu Road, Haidian District Beijing 100871 China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    radio frequency microelectromechanical system switches; ohmic contacts; microsprings; power-handling ability; metallic sacrificial layers; surface micromachining;

    机译:射频微机电系统开关;欧姆接触微弹簧力量处理能力;金属牺牲层;表面微加工;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号