Electrical properties of Schottky diodes based on Carbazole

摘要

Sandwich structures of Carbazole thin films have been prepared by using vacuum deposition technique. The plot of current density versus voltage (J–V characteristics) shows two distinct regions. In the lower voltage region ohmic conduction and in the higher voltage region space charge limited conduction (SCLC) is observed. Number of states in the valence band (Nv) is calculated from the temperature dependence of J in the ohmic region. From the temperature dependence of J in the SCLC region trap density (Nt) and activation energy are determined. The values of Nv and Nt are in the order 10~(23)m~(-3) and 10~(27)m~(-3) respectively. The value of activation energy is nearly equal to 0.1 eV and that of the effective mobility is 4.5 × 10~(-7)cm~(2)V~(-1)S~(-1). Schottky diodes are fabricated using Aluminium (Al) as Schottky contact. It is observed that gold (Au) is more suitable for ohmic contact compared to silver (Ag). From a semi logarithmic plot of J versus V, the barrier height (φb), diode ideality factor (n) and saturation current density (J_0 ) are determined. The value of n increases and ϕb decreases on annealing.