Effect of processing conditions on the nucleation and growth of indium-tin-oxide nanowires made by pulsed laser ablation

摘要

Indium–tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 °C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor–liquid–solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/μm2. After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the 〈100〉 direction. These structures have potential applications in electrical and optical nanoscale devices.