Stabilization of wurtzite Si nanocrystals embedded in a metal/metal silicide matrix by the metal induced crystallization process is demonstrated. The process involves the growth of 50 nm thick Ni films on borosilicate glass (BSG) substrates followed by 700 nm thick amorphous Si films and annealing of this multilayered stack at 550 °C in furnace atmosphere for 1 h. The presence of wurtzite Si is established based on electron diffraction studies and is also confirmed by the Raman signature of wurtzite Si at 504 cm−1. It is shown that the growth of wurtzite Si is mediated by the formation of Nickel Silicide, as evidenced by the Raman signal at 294 cm−1. The films exhibit a band gap greater than 1.9 eV with dc resistances of the order of 10 GΩ. It is proposed that such high resistivities should make this form of Si ideal for PV and microwave device applications.
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