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首页> 外文期刊>Journal of Materials Science >Structure and dielectric properties of A-site-deficient perovskite Nd(1 − x)/3M x NbO3 (M = Li, Ag; 0 ≤ x ≤ 0.20) ceramics
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Structure and dielectric properties of A-site-deficient perovskite Nd(1 − x)/3M x NbO3 (M = Li, Ag; 0 ≤ x ≤ 0.20) ceramics

机译:A位缺陷钙钛矿Nd(1-x)/ 3 M x NbO3 (M = Li,Ag; 0≤x≤0.20)陶瓷的结构和介电性能

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Crystal structure and dielectric properties of the A-site-deficient perovskites Nd(1 − x)/3M x NbO3 (M = Li, Ag; 0 ≤ x ≤ 0.20) ceramics were investigated with X-ray diffractometer (XRD), network analyzer, and impedance analyzer. XRD results showed that no secondary phase was observed for Ag-doped specimens. However, a second phase LiNdNb2O7 appeared for Li-doped ones when x ≥ 0.16. The crystal structure at room temperature transformed from orthorhombic (0 ≤ x 0.16) into tetragonal symmetry (0.16 ≤ x ≤ 0.20) with the increase of x. Complex impedance analysis and the dielectric properties measured at low frequency showed that the dielectric loss in Nd(1 − x)/3M x NbO3 (M = Li, Ag; 0 ≤ x ≤ 0.20) at low frequency was mainly caused by the lithium or silver ionic conduction, which increased with the increase of temperature. However, the dielectric loss originated from the ionic conductivity was frozen at microwave frequency. The dielectric constant (ε r) increased with the addition of Ag, whereas it decreased with the increase of Li addition. The pure and Ag-doped specimens exhibited large positive temperature coefficient of resonant frequency (τ f), while the τ f value changed from positive into negative with the increase of Li addition. The Q × f value increased from 437 to 1,110 GHz in the case of Li doping and 765 GHz in the case of Ag doping, respectively, when x increased from 0 to 0.12. Further increase in x decreased the Q × f values both for the Li- and Ag-doped specimens. Good combined microwave dielectric properties with ε r = 153, Q × f = 1,110 GHz and τ f = −45 ppm/°C could be obtained for the Li-doped specimen when x = 0.12.
机译:A位缺陷钙钛矿Nd(1-x)/ 3 M x NbO3 (M = Li,Ag; 0≤x≤0.20)陶瓷的晶体结构和介电性能用X射线衍射仪(XRD),网络分析仪和阻抗分析仪进行了研究。 XRD结果表明,掺杂Ag的样品没有观察到第二相。然而,当x≥0.16时,掺杂锂的第二相LiNdNb2 O7 出现。随着x的增加,室温下的晶体结构从正交晶体(0≤x <0.16)变为四方对称(0.16≤x≤0.20)。复阻抗分析和低频介电性能表明,Nd(1-x)/ 3 M x NbO3 的介电损耗(M = Li,Ag; 0≤x低频下≤0.20)的主要原因是锂或银离子传导,随温度升高而增加。然而,源自离子电导率的介电损耗在微波频率下被冻结。介电常数(εr )随添加Ag而增加,而随Li添加而降低。纯的和掺银的样品表现出较大的共振频率正温度系数(τf ),而随着Li添加量的增加,τf 值从正变负。当x从0增加到0.12时,Li掺杂的Q×f值分别从437 GHz增加到1,110 GHz,而Ag掺杂的Q×f值增加到765 GHz。 x的进一步增加会降低掺杂Li和Ag的样品的Q×f值。当x = 0.12时,掺锂样品可以获得良好的组合微波介电特性,其中εr = 153,Q×f = 1,110 GHz和τf = -45 ppm /°C。

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  • 来源
    《Journal of Materials Science 》 |2012年第16期| p.6015-6024| 共10页
  • 作者单位

    Department of Inorganic Materials, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China;

    Department of Inorganic Materials, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China;

    Department of Inorganic Materials, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China;

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