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首页> 外文期刊>Journal of materials science >5G microstrip patch antenna and microwave dielectric properties of 4 mol%LiF-MgO-xwt%MTiO_3 (M = Ca, Sr) composite ceramics
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5G microstrip patch antenna and microwave dielectric properties of 4 mol%LiF-MgO-xwt%MTiO_3 (M = Ca, Sr) composite ceramics

机译:5g微带贴片天线和4mol%LiF-MgO-XWT%MtiO_3(M = CA,SR)复合陶瓷的微波介电性能

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摘要

The combination of low dielectric constant (ε_r) and a high-quality factor (Q × f) in MgO ceramics makes them attractive for 5G applications. However, the large negative temperature coefficient of resonance frequency (τ_f) impedes these applications. In this paper, the composite ceramics of MgO-xMTiO_3 (M = Ca, Sr;x = 0, 2.5, 5, 7.5, 10 wt%) with the addition of 4 mol% LiF as a sintering aid were fabricated by the traditional solid-state reaction method. The coexistence both MgO and MT phases can be observed in XRD and SEM in the 4 mol% LiF-MgO-wt%MTiO_3 systems under the high-temperature sintering process. With the addition of MT, the grain size of MgO decreased, the ε_r value improved with τ_f value gradually increasing from negative to positive value. Optimized microwave dielectric properties were achieved for 4 mol%LiF-MgO-10wt%SrTiO_3 ceramics sintered at 1300 °C for 6 h, yielding ε_r = 11.2, Q × f = 46, 815 GHz, and τ_f = + 3.51 ppm/°C. Based on it, a prototype of microstrip patch antenna was designed and fabricated with a center frequency at 5.64 GHz for 5G-Sub6GHz communication applications.
机译:低介电常数(ε_R)和MgO陶瓷中的高质量因数(Q×F)的组合使它们对5G应用具有吸引力。然而,谐振频率(τ_f)的大负温度系数阻碍了这些应用。本文通过传统的固体制造,通过加入4mol%LiF的MgO-XMTiO_3(M = Ca,Sr; x = 0,2.5,5,7.5,10wt%)的复合陶瓷由传统的固体制成烧结助剂 - 酯类反应方法。在高温烧结过程下,可以在4mol%Lif-MgO-Wt%Mtio_3系统中在XRD和SEM中观察到MgO和MT相。随着MT的添加,MgO的晶粒尺寸减小,ε_R值随τ_f值改善,τf值从负到正值逐渐增加。优化的微波介电性能对于在1300℃下烧结6小时的4mol%LiF-MgO-10wt%SRTIO_3陶瓷,得到ε_R= 11.2,Q×F = 46,815GHz和τ_f= 3.51ppm /°C 。基于它,设计了一个微带贴片天线的原型,在5.64GHz的中心频率下设计和制造了5G-Sub6GHz通信应用。

著录项

  • 来源
    《Journal of materials science》 |2021年第19期|23880-23888|共9页
  • 作者单位

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    Department of Physics Abdul Wall Khan University Mardan 23200 Pakistan;

    Department of Materials Engineering NED University of Engineering and Technology Karachi 75279 Pakistan;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    College of Automation Hangzhou Dianzi University Hangzhou 310018 China;

    College of Automation Hangzhou Dianzi University Hangzhou 310018 China;

    College of Electronics Information Hangzhou Dianzi University Hangzhou 310018 China;

    Key Laboratory of Inorganic Functional Material and Device Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China;

    Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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