机译:在AU /(NIS:PVP)/ N-Si结构中的频率相关的复合电介质,复合电模量和电导率
Department of Physics Faculty of Sciences Gazi University Ankara Turkey;
Department of Physics Faculty of Sciences Gazi University Ankara Turkey;
Photonics Application and Research Center Gazi University 06500 Ankara Turkey Photonics Department Applied Science Faculty Gazi University 06500 Ankara Turkey;
Photonics Application and Research Center Gazi University 06500 Ankara Turkey Photonics Department Applied Science Faculty Gazi University 06500 Ankara Turkey;
机译:比较Au / n-Si和Au /(CoSO_4-PVP)/ n-Si结构(SBD)的电参数以确定室温下(CoSO_4-PVP)有机中间层的影响
机译:频率和电压相关的电气参数,接口陷阱和AU /(NIS:PVP)/ N-Si结构的串联电阻分布
机译:Au / PVP / n-Si(MPS)结构在室温下在宽频率和电压范围内的介电常数,模量和电导率研究
机译:界面层对AU / N-Si和Ni / N-Si肖特基二极管前电电压特性的影响
机译:Ti-Ni-Au形状记忆合金的结构与性能
机译:通过同时金属沉积聚合获得的新型Ni / pHEMA-gr-PVP复合材料:结构和性能
机译:(0.01Ni-PVA)中间层,接口疏水阀(DIT)和串联电阻(RS)在室温下Au / n-Si(MS)结构中的传导机构(CMS)的影响