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A systematic investigation on structural and optical properties of sol-gel spin coating fabricated CdS nanocrystalline thin films: effect of Ni doping

机译:溶胶 - 凝胶旋转涂层结构和光学性质的系统研究,制备CDS纳米晶薄膜:Ni掺杂的影响

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摘要

In the present work, we have successfully fabricated undoped and Ni-doped nanocrystalline CdS thin film on an ultrasonically cleaned glass substrate employing the sol-gel spin coating technique. The structural and spectroscopic properties of the films were investigated using XRD spectra, UV-Vis spec-troscopy and photoluminescence spectra, respectively. The X-ray diffraction spectra revealed the polycrystalline nature of films with cubic structure and (111) as preferred orientation. The average crystallite size evaluated by the Debye-Scherrer formula lying in the range of 6-12 nm for the deposited films. According to UV-VIS Spectroscopy, the average transmittance of films in the visible region varies between 70-90%. The optical band gap of CdS thin film was evaluated from absorption spectra. The bandgap of the deposited films is in the range of 2.48-2.70 eV which is higher than that of bulk CdS (2.42 eV). This verifies the blue shifting in band edge of CdS nanocrystalline thin films due to the quantum confinement effect. Photoluminescence spectra of the thin film showed that the fundamental band edge emission peak centred at 485 nm also called blue band emission. It is observed that the low temperature resistivity of the films was in the range of 10~7-10~3 Ω cm and also found to decrease with increasing Ni concentration, as a result from dc two probe measurements.
机译:在本作本作中,我们在采用溶胶 - 凝胶旋转涂层技术的超声清洗的玻璃基板上成功地制造了未掺杂的和Ni掺杂的纳米晶Cds薄膜。使用XRD光谱,UV-Vis Spec-Troscopy和光致发光光谱研究膜的结构和光谱性质。 X射线衍射光谱揭示了具有立方结构的膜的多晶性质和(111)作为优选取向。由Debye-Scherrer公式评估的平均微晶尺寸,其沉积膜的6-12nm的范围。根据UV-Vis光谱,可见区域中薄膜的平均透射率在70-90%之间变化。从吸收光谱评价CDS薄膜的光带隙。沉积膜的带隙在2.48-2.70eV的范围内,其高于散装Cds(2.42eV)。由于量子限制效应,这验证了CDS纳米晶薄膜的带边的蓝色移位。薄膜的光致发光光谱表明,在485nm处的基本频带边缘发射峰也称为蓝带发射。观察到,薄膜的低温电阻率在10〜7-10〜3Ωcm的范围内,并且还发现随着Ni浓度的增加而降低,因为DC两种探针测量结果增加。

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  • 来源
    《Journal of materials science》 |2021年第15期|20903-20911|共9页
  • 作者单位

    Department of Applied Physics Bhilai Institute of Technology Durg CG 491001 India;

    Department of Applied Physics Bhilai Institute of Technology Durg CG 491001 India;

    Department of Applied Physics Bhilai Institute of Technology Durg CG 491001 India;

    Department of Physics Shri Shankaracharya Technical Campus Bhilai CG 490020 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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