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首页> 外文期刊>Journal of materials science >Effect of sintering temperature on structural, dielectric, and electrical property studies of Bi_4NdTi_3FeO_(15) aurivillius ceramics
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Effect of sintering temperature on structural, dielectric, and electrical property studies of Bi_4NdTi_3FeO_(15) aurivillius ceramics

机译:烧结温度对Bi_4NDTI_3FEO_(15)AURIVILLIUS陶瓷的结构,电介质和电学研究的影响

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摘要

The effect of sintering temperature on the structural, magnetic, dielectric, and electric properties of four-layered Bi_4NdTi_3FeO_(15) Aurivillius multiferroic ceramics was studied. The ceramics was prepared by conventional solid-state reaction. The Rietveld refined room temperature (RT) X-ray diffraction and Raman studies revealed that the samples exhibited an orthorhombic structure with A_21am space group. The surface morphology studies indicated that the samples exhibited non-uniform and randomly oriented plate-like grains. The P-E hysteresis loops of the samples showed an unsaturated polarization even at a high field of 90 kV/cm, indicates weak ferroelectric at RT. Room temperature magnetization curves indicate weak antiferromagnetic nature with remanent magnetization ~ 4 memu/g. The M-H loops at low temperature 10 K showed the ferromagnetic nature. The temperature dependence of dielectric and impedance data showed a dielectric relaxation which could be ascribed to short-range movements of oxygen vacancies.
机译:研究了烧结温度对四层Bi_4NDTI_3FeO_(15)Aurivillius多体色陶瓷的结构,磁,电介质和电性能的影响。通过常规固态反应制备陶瓷。 RIETVELD精制室温(RT)X射线衍射和拉曼研究表明,样品与A_21AM空间组显示出正晶状体结构。表面形态学研究表明,样品表现出不均匀和随机取向的板状晶粒。即使在90kV / cm的高场,样品的P-E滞后环也显示出不饱和偏振,表明在室温下的铁电弱。室温磁化曲线表示具有剩余磁化的弱反合磁性〜4 Memu / g。低温10k下的M-H环显示了铁磁性。电介质和阻抗数据的温度依赖性显示了介电弛豫,其可以归因于氧空位的短距离运动。

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  • 来源
    《Journal of materials science 》 |2021年第7期| 9675-9684| 共10页
  • 作者单位

    Department of Physics Rajiv Gandhi University of Knowledge Technologies (AP-IIIT) RK Valley Kadapa 516330 India;

    Department of Engineering Physics Andhra University College of Engineering Visakhapatam 530003 India;

    Department of Physics Institute of Science GITAM (Deemed To Be University) Visakhapatnam Andhra Pradesh 530045 India;

    UGC-DAE Consortium for Scientific Research Mumbai Center BARC Mumbai 400085 India;

    Department of Physics Rajiv Gandhi University of Knowledge Technologies (AP-IIIT) RK Valley Kadapa 516330 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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