Effect of doped polyaniline/graphene oxide ratio as a hole transport layer on the performance of perovskite solar cell

摘要

Perovskite solar cells (PSCs) are believed to be one of a promising choice of the third-generation technology platforms to address the increasing green energy demands. The main objective of this work is to fabricate a hole transport layer (HTL) based on doped polyaniline (PANI) and graphene oxide with different ratios. This layer was characterized using Raman spectroscopy, scanning electron microscope (SEM), atomic force microscopy (AFM), UV-Visible spectroscopy, photoluminescence, contact angle, Hall effect and current density-voltage measurements. Photoluminescence confirmed that the HTL of PANI/ GO with 1:0.5 ratio had the highest efficiency to extract hole carriers. The conductivity and carrier concentrations of this layer were increased with the addition of small amounts of GO up to 1:0.5 and declined at the high ratio of 1:1. The optimal performance of the fabricated inverted PSC using HTL of PANI/ GO with 1:0.5 ratio had short-current density (J_(sc)), open circuit voltage (V_(oc)), fill factor (FF) and efficiency of 21.23 mA/cm~2, 0.52 V, 0.67 and 9.24%, respectively.