首页> 外文会议>International Symposium on Next Generation Electronics >Sputtering and annealing graphene oxide hole-transporting layer for perovskite solar cells
【24h】

Sputtering and annealing graphene oxide hole-transporting layer for perovskite solar cells

机译:钙钛矿型太阳能电池溅射退火氧化石墨烯空穴传输层

获取原文

摘要

In this study, the graphene thin films were deposited by reactive radio-frequency magnetron sputter. Then, the graphene thin film was annealing with different temperature in the atmosphere to form graphene oxide (GO) thin films. The solar cell structure was inverted for ITO/Graphene oxide/ CH3NH3PbI3/PCBM/Ag. Photovolatic conversion efficiency of the cells based on the different graphene oxide morphologies was analyzed by XRD, SEM, PL, TR-PL and UV-Vis absorption spectra. The power conversion efficiency of the best cell was 1.75%.
机译:在这项研究中,通过反应性射频磁控溅射沉积石墨烯薄膜。然后,在大气中在不同温度下对石墨烯薄膜进行退火以形成氧化石墨烯(GO)薄膜。 ITO /氧化石墨烯/ CH的太阳能电池结构反转 3 NH 3 3 / PCBM / Ag。通过XRD,SEM,PL,TR-PL和UV-Vis吸收光谱分析了基于不同氧化石墨烯形态的细胞的光转化效率。最佳电池的功率转换效率为1.75%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号