Back-side-illuminated CCDs for EBCCDs: 'dead-layer' compensation

摘要

The near-surface "dead-layer" nature and its negative impact on back-side-illuminated charge-coupled devices (CCDs) have been investigated in detail. Special attention is devoted to the analysis of methods for the "dead-layer" eliminating. The study of this phenomenon was carried out using the technique of electrochemical capacitance-voltage profiling by measuring, simulating, and analyzing free charge carrier concentration profiles of back-side-illuminated CCDs, taken at various technological stages. Different techniques of annealing for ion implanted CCDs were used. By analyzing and comparison of free charge carriers concentration profiles, the recommendations for optimization of technology for back-thinned CCDs were proposed, aiming to increase of pulling field and decrease the impact of surface potential on charge carrier transport.