Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays

摘要

This paper designs a novel structure to increase the modulation bandwidth of GaN-based light-emitting diode. The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly couple with quantum wells to increase the carrier concentration of light-emitting diodes, so as to increase the recombination opportunities between electrons and holes, thus reducing the carrier recombination lifetime. The diamond arrays are used to improve the heat dissipation performance of the device, so as to reduce the carrier recombination lifetime by increasing the injection current density of the light-emitting diode. The COMSOL software is used to simulate the designed structure, and the average electric field mode and temperature distribution are obtained. The high modulation bandwidth light-emitting diode provides an advantage for increasing the transmission rate of the visible light communication system.