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首页> 外文期刊>Journal of materials science >Ultrasensitive ppb-level H_2S gas sensor at room temperature based on WO_3/rGO hybrids
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Ultrasensitive ppb-level H_2S gas sensor at room temperature based on WO_3/rGO hybrids

机译:超敏感的PPB级H_2S气体传感器在室温下,基于WO_3 / RGO杂种

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摘要

Gas sensors with high performance and low energy consumption are necessary for system integration in the environment monitoring of explosives. High-performance room-temperature hydrogen sulfide (H_2S) gas sensors were fabricated based on the hybrids of tungsten oxide (WO_3)/reduced graphene oxide (rGO). WO_3 nanocubes modified with different contents of rGO were synthesized by acid-based hydrothermal method. The optimal amount of rGO in the composite is 5 wt%, at which the room-temperature operating sensor presents the highest sensitivity of approximately 32.7 to 500 ppb H_2S, a fast recovery time of ~ 180 s, as well as an excellent sensing selectivity. The overall improvement in sensing performances demonstrated an important progress made in H_2S sensor fabrication for portable and real-time gas detection. The improved gas-sensing performance is attributed to the large specific surface area of the WO_3 nanocubes, the formation of WO_3/rGO heterojunc-tions, and the enhanced electron transfer efficiency.
机译:具有高性能和低能耗的气体传感器是系统集成在爆炸物环境监测中的系统集成所必需的。高性能室温硫化氢(H_2S)气体传感器是基于氧化钨(WO_3)/氧化石墨烯(RGO)的杂交种制备的。用酸基水热法合成用Rgo的不同含量修饰的WO_3纳米孔。复合材料中的RGO的最佳量为5wt%,室温操作传感器在其上具有约32.7至500ppb的H_2s的最高灵敏度,快速恢复时间为〜180 s,以及优异的感测选择性。感测性能的总体改进证明了用于便携式和实时气体检测的H_2S传感器制造中的重要进展。改善的气体传感性能归因于WO_3纳米孔的大的比表面积,形成WO_3 / RGO HeterOnjunc-Tions的形成,以及增强的电子转移效率。

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  • 来源
    《Journal of materials science 》 |2020年第6期| 5008-5016| 共9页
  • 作者单位

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology School of Physics Science and Engineering Tongji University Shanghai 200092 People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China;

    Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology School of Physics Science and Engineering Tongji University Shanghai 200092 People's Republic of China The Institute of Dongguan-Tongji University Dongguan 523808 Guangdong People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China;

    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 200083 People's Republic of China Hangzhou Institute for Advanced Study UCAS Hangzhou 310024 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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