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Growth and optical properties of aluminum-doped zinc oxide nanostructures on flexible substrates in flexible electronics

机译:柔性电子中柔性基板上铝掺杂氧化锌纳米结构的生长和光学性质

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摘要

Undoped ZnO nanowire arrays and Al-doped ZnO nanostructures with nanowires and nanosheets were successfully synthesized on a polyethylene terephthalate substrate using the rapid hydrothermal synthesis. These undoped ZnO nanowire arrays showed close alignment with highly c-axis oriented and well-defined hexagonal facets (001). The coexistence of the nanowires and nanosheets was observed during the introduction of Al ions. The number of nanosheets increased due to the Al doping concentration and the lack of surface energy. The diameter of the nanosheets and the length of nanowire arrays also increased as a function of the growth time. Room-temperature photoluminescence spectra show that the ZnO:Al nanostructures on the ZnO seeded polyethylene terephthalate substrate yield low level of the defect density compared to the ZnO seeded glass substrate to remove post annealing process.
机译:使用快速水热合成技术成功地在聚对苯二甲酸乙二醇酯基底上合成了未掺杂的ZnO纳米线阵列以及具有纳米线和纳米片的Al掺杂的ZnO纳米结构。这些未掺杂的ZnO纳米线阵列显示出与高度c轴取向和轮廓分明的六边形小面(001)紧密对齐。在引入铝离子的过程中观察到纳米线和纳米片的共存。由于铝的掺杂浓度和缺乏表面能,纳米片的数量增加了。纳米片的直径和纳米线阵列的长度也随着生长时间而增加。室温光致发光光谱表明,与ZnO晶种玻璃基板相比,ZnO晶种聚对苯二甲酸乙二醇酯基板上的ZnO:Al纳米结构产生的缺陷密度低,从而消除了后退火工艺。

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  • 来源
    《Journal of materials science 》 |2011年第9期| p.1350-1356| 共7页
  • 作者单位

    Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634, USA;

    Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea;

    Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea;

    Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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