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首页> 外文期刊>Journal of materials science >Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths
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Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths

机译:柠檬酸盐浴中电沉积纳米晶CoFeCu薄膜的电阻率和磁性的研究

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摘要

In this study, nanocrystalline CoFeCu thin films were electrodeposited at different current densities from baths with natural pH (around 5.2) and containing 20 g/L citrate sodium. The relationship of films structure with soft magnetic properties and electrical resistivity, which are required for new generation magnetic head core, were investigated. SEM, EDS, XRD, TEM, VSM and four probe-point methods were used for characterization of the deposited films. The deposited films exhibited very uniform and homogenous structure with co-axis grains (confirmed by (111) and (110) poles figures and TEM images) throughout the coating. Overall, it was noticed that increasing current density from 1 to 24 mA/cm~2 reduced both grain size (from 63 to 8 nm) and coercivity (from 20 to 1 Oe) of the films. In addition, plotting Log (Hc) versus Log (D~6) demonstrated that the coercivity of the films followed "D~6 law". Moreover, increasing current density changed phase structures of the films from FCC (Cu)+FCC (Co) to FCC (Co) and then to FCC (Co)+BCC (Fe). The double phase films exhibited the lowest coercivity in comparison with single phase films due to their finer grain size. However, grain size had no effect on saturation magnetization of the films. An increase in current density up to 10 mA/cm~2 also caused the substitution of diamag-netic copper with cobalt and iron in the deposit which led to reduction in saturation magnetization. Increasing current density also led to increasing grain boundaries in the deposits and hence, according to "scattering hypotheses", enhanced the electrical resistivities.
机译:在这项研究中,纳米晶CoFeCu薄膜在具有自然pH值(约5.2)且含有20 g / L柠檬酸钠的浴中以不同的电流密度电沉积。研究了新一代磁头磁芯所需的膜结构与软磁性能和电阻率之间的关系。 SEM,EDS,XRD,TEM,VSM和四种探测点方法用于表征沉积膜。沉积的膜在整个涂层中均显示出非常均匀且均匀的结构,具有同轴晶粒(由(111)和(110)极图和TEM图像确认)。总的来说,注意到电流密度从1增加到24mA / cm 2降低了薄膜的晶粒尺寸(从63nm到8nm)和矫顽力(从20到1Oe)。另外,绘制Log(Hc)对Log(D〜6)的曲线表明,薄膜的矫顽力遵循“ D〜6定律”。此外,电流密度的增加使薄膜的相结构从FCC(Cu)+ FCC(Co)变为FCC(Co),然后变为FCC(Co)+ BCC(Fe)。与单相膜相比,双相膜表现出最低的矫顽力,因为它们的晶粒尺寸较小。但是,晶粒尺寸对膜的饱和磁化强度没有影响。电流密度增加到10 mA / cm〜2还导致沉积物中的钴和铁替代了反磁性铜,导致饱和磁化强度降低。电流密度的增加还导致沉积物中晶界的增加,因此,根据“散射假设”,电阻率得到了提高。

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  • 来源
    《Journal of materials science》 |2012年第6期|p.1174-1181|共8页
  • 作者单位

    School of Metallurgy and Materials Engineering,College of Engineering, University of Tehran,P.O. Box 11155-4563, Tehran, Iran;

    School of Metallurgy and Materials Engineering,College of Engineering, University of Tehran,P.O. Box 11155-4563, Tehran, Iran;

    School of Metallurgy and Materials Engineering,College of Engineering, University of Tehran,P.O. Box 11155-4563, Tehran, Iran;

    School of Metallurgy and Materials Engineering,College of Engineering, University of Tehran,P.O. Box 11155-4563, Tehran, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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