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Effects of RF magnetron sputtering power density on NTC characteristics of Mn-Co-Ni thin films

机译:射频磁控溅射功率密度对Mn-Co-Ni薄膜NTC特性的影响

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摘要

Thin film NTCR (negative temperature coefficient resistance), based on Mn-Co-Ni oxide, was prepared by reactive RF magnetron sputtering with various sputtering power density (0.95-3.82 W/cm~2). The crystalline structure and surface morphology of the NTC thin film were analyzed by XRD and AFM. The NTC characteristics, as a function of sputtering power density, were investigated. The values of B, α_(25) and R_(25) were in the range of 3,740-3,847 K, -4.328 to -4.207 %/K and 8.7-2,082.5 KΩ, respectively. With the increasing power density, the standard resistance (R_(25)) decreased and the consistency of R_(25) increased. Thin film NTCR with stable B value (3,740 K), low R_(25) (104 Ω) and excellent consistency could be fabricated in mass production with about 3.82 W/cm~2 sputtering power density.
机译:基于Mn-Co-Ni氧化物的薄膜NTCR(负温度系数电阻)通过具有各种溅射功率密度(0.95-3.82 W / cm〜2)的反应性RF磁控管溅射制备。用XRD和AFM分析了NTC薄膜的晶体结构和表面形貌。研究了NTC特性与溅射功率密度的关系。 B,α_(25)和R_(25)的值分别在3,740-3,847 K,-4.328至-4.207%/ K和8.7-2,082.5KΩ的范围内。随着功率密度的增加,标准电阻(R_(25))减小,R_(25)的一致性增加。具有稳定的B值(3,740 K),低的R_(25)(104Ω)和优异的稠度的薄膜NTCR可以批量生产,溅射功率密度约为3.82 W / cm〜2。

著录项

  • 来源
    《Journal of materials science》 |2013年第4期|1203-1207|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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