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One step synthesis of silver nanowires used in preparation of conductive silver paste

机译:用于制备导电银浆的一步法合成银纳米线

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摘要

For mass preparation of conductive silver paste, a convenient approach to synthesize silver nanowires (Ag NWs) is presented. Monodisperse Ag NWs with ca. 40 nm in diameter and over 10 μm in length were successfully obtained in high yield only by heating a mixture of AgNO_3, poly(vinyl pyrrolidone), ethylene glycol and HCl prepared previously. This method not only simplifies the conventional polyol process but also extremely improves its repeatability. More important, the patterns fabricated with the Ag NWs naturally have a high conductivity, up to ca. 13 % of bulk silver, due to the cross-linked network structure formed by accumulation of nanowires. The conductivity even can be improved to 41 % of bulk silver conductivity through a chemical sintering at room temperature, which makes us believe that the Ag NWs could be broadly applied in preparation of conductive paste.
机译:为了批量制备导电银浆,提出了一种方便的合成银纳米线(Ag NWs)的方法。单分散银纳米线约仅通过加热先前制备的AgNO_3,聚(乙烯基吡咯烷酮),乙二醇和HCl的混合物,就可以高收率成功地成功获得直径40 nm,长度超过10μm的材料。该方法不仅简化了传统的多元醇工艺,而且极大地提高了其可重复性。更重要的是,用银纳米线制作的图案自然具有很高的电导率,最高可达到约。由于纳米线的堆积形成了交联的网络结构,因此占散装银的13%。通过在室温下进行化学烧结,甚至可以将电导率提高到整体银电导率的41%,这使我们相信Ag NWs可以广泛地用于制备导电胶。

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  • 来源
    《Journal of materials science》 |2014年第7期|2929-2933|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu, Sichuan, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:46:19

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