机译:退火过程中O_2流速对钒氧化物薄膜金属-绝缘体转变的影响
School of Electronics and Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, People's Republic of China;
School of Electronics and Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, People's Republic of China;
School of Electronics and Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, People's Republic of China;
School of Electronics and Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, People's Republic of China;
School of Electronics and Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, People's Republic of China;
机译:O_2浓度对射频磁控溅射制备钒氧化物薄膜金属-绝缘体转变性能的影响
机译:脉冲激光沉积(PLD)对二氧化钒(VO_2)薄膜(PLD)的氧气流速对金属 - 绝缘体转变(MIT)特性的影响
机译:氧气流量对射频磁控溅射法生长钒氧化物薄膜金属-绝缘体转变的影响
机译:经历金属-绝缘体相变的二氧化钒薄膜中太赫兹辐射的产生
机译:非化学计量,铬和钛掺杂的钒氧化物薄膜中的金属-绝缘体过渡。
机译:应变诱导缺氧的Fe氧化物外延薄膜中金属-绝缘体转变温度的显着增加
机译:温度场和电场诱导金属 - 绝缘子转变 原子层沉积二氧化钒薄膜
机译:二氧化钒薄膜金属绝缘子转变的探索与优化