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Effect of reaction temperature on surface morphology and photoelectric properties of ZnO grown by hydrothermal method in mixed solvent

机译:反应温度对混合溶剂中水热法生长ZnO表面形貌和光电性能的影响

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摘要

ZnO thin films were prepared by hydrothermal method in mixed solvent with different reaction temperatures. Microstructure, surface morphology, optical properties and UV photoresponse of the thin films have been investigated by means of X-ray diffractometer, scanning electron microscopy, laser micro-Raman spectrometer, UV-Vis spectrophotometer and interactive source meter instrument. The results indicated that ZnO thin films consist of ZnO nanoparticles with hexagonal wurzite structure. A small quantity of Zn(OH)_2 appear as reaction temperature increase to 125 ℃. ZnO thin film grown at 175 ℃ consists of many densely vertically aligned ZnO nano rods on the substrate and has the best preferential c-axis orientation. Three peaks centered at about 446, 568 and 1150 cm~(-1) have been attributed to E_2(high), A_1(LO) and 2A_1(LO) phonon mode. Broadening of the visible emission band may be attributed to abundant surface defects and surface states of the thin films. Variation of the E_g may be attributed to the synergy of surface morphology and oxygen-vacancy (V_O) density. The fast and slow UV photo response may be attributed to the adsorption and photo desorption of oxygen molecules on the surface of ZnO thin films and exchange process between oxygen gas and native deep defect level, respectively.
机译:采用水热法在不同反应温度的混合溶剂中制备ZnO薄膜。利用X射线衍射仪,扫描电子显微镜,激光显微拉曼光谱仪,UV-Vis分光光度计和交互源仪等手段对薄膜的微观结构,表面形貌,光学性能和UV光响应进行了研究。结果表明,ZnO薄膜由具有六方纤锌矿结构的ZnO纳米颗粒组成。随着反应温度升高到125℃,出现少量的Zn(OH)_2。 175℃下生长的ZnO薄膜由许多紧密垂直排列的ZnO纳米棒组成,并具有最佳的c轴优先取向。 E_2(high),A_1(LO)和2A_1(LO)声子模式分别位于446、568和1150 cm〜(-1)处的三个峰。可见光发射带的变宽可归因于大量的表面缺陷和薄膜的表面状态。 E_g的变化可以归因于表面形态和氧空位(V_O)密度的协同作用。快速和慢速的紫外光响应可分别归因于ZnO薄膜表面上氧分子的吸附和光解吸以及氧气与天然深缺陷能级之间的交换过程。

著录项

  • 来源
    《Journal of materials science》 |2015年第7期|5518-5523|共6页
  • 作者单位

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601, China;

    School of Physics and Material Science, Anhui University, Hefei 230039, China;

    School of Physics and Material Science, Anhui University, Hefei 230039, China;

    School of Physics and Material Science, Anhui University, Hefei 230039, China;

    School of Physics and Material Science, Anhui University, Hefei 230039, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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