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Characteristics of pulse electrodeposited CuAlSe_2 films

机译:脉冲电沉积CuAlSe_2薄膜的特性

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摘要

CuAlSe_2 films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles for the first time. X-ray diffraction studies indicated single phase chalcopyrite CuAlSe_2. Strain, crystallite size and dislocation density were evaluated from the X-ray diffraction data. The Cu/Al ratio approaches unity at higher duty cycles. Electrical transport properties of the films indicated that the resistivity of the films decreased with increase of duty cycle. Photoelectrochemical cells were fabricated with the films deposited at different duty cycles. Films deposited at 50 % duty cycle indicated high photo output. Capacitance voltage measurements were made and the nature of the plot indicated p-type behaviour.
机译:首次以不同的占空比将CuAlSe_2薄膜脉冲电沉积在涂有氧化锡的玻璃基板上。 X射线衍射研究表明单相黄铜矿CuAlSe_2。从X射线衍射数据评估应变,微晶尺寸和位错密度。在较高的占空比下,Cu / Al比接近于1。薄膜的电传输性质表明,薄膜的电阻率随着占空比的增加而降低。用在不同占空比下沉积的薄膜制造了光电化学电池。以占空比为50%沉积的薄膜显示出较高的光输出。进行电容电压测量,曲线的性质表明p型行为。

著录项

  • 来源
    《Journal of materials science》 |2015年第6期|3657-3663|共7页
  • 作者单位

    Department of Physics, Shree Venkateshwara Hi-Tech Engineering College, Gobichettipalayam 638455, India;

    Department of Physics, Vidyaa Vikas College of Engineering and Technology, Tiruchengode, India;

    ECMS Division, CSIR-CECRI, Karaikudi, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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