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Studies on vertically grown and annealed ZnO nanorods synthesized through aqueous solution process

机译:水溶液法合成垂直生长退火ZnO纳米棒的研究

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摘要

Zinc Oxide (ZnO) nanostructured thin films were grown by double dip method also known as successive ionic layer adsorption and reaction method on glass substrates using ammonium zincate solution. The structural and optical properties were studied after annealing the deposited films between 300 and 500 ℃. The films were characterized by X-ray diffraction, scanning electron microscopy and optical absorption measurement techniques. The hexagonal wurtzite structure of the synthesized samples as confirmed by the X-ray diffraction studies was found to be not affected by the annealing temperature. The crystallite sizes and lattice strain on the peak broadening of annealed ZnO thin films were studied. The scanning electron microscopy images of ZnO show vertically grown perfect hexagonal shaped nanorods with diameters ranging from 100 to 450 nm. A high transmittance along with low scattering or absorption losses is observed in the visible region for the films annealed between 300 and 500 ℃. This shows the good optical quality of the films and could be useful as transparent electrodes for application in industries. The ZnO films exhibit direct band gap transition with the band gap values lying between 3.12 and 3.35 eV. A red shift is observed in the absorption edge as the annealing temperature is increased. The variations in the crystal size and energy gap due to the annealing temperature of the ZnO deposited substrates make it a promising candidate for opto-electronic device application.
机译:氧化锌(ZnO)纳米结构薄膜是通过双浸法(也称为连续离子层吸附和反应法)使用锌酸铵溶液在玻璃基板上生长的。在300到500℃之间对沉积膜进行退火后,研究了其结构和光学性质。通过X射线衍射,扫描电子显微镜和光吸收测量技术对膜进行表征。通过X射线衍射研究证实,合成样品的六方纤锌矿结构不受退火温度的影响。研究了退火ZnO薄膜的峰展宽的晶粒尺寸和晶格应变。 ZnO的扫描电子显微镜图像显示了垂直生长的直径为100至450 nm的完美六角形纳米棒。在300到500℃之间退火的薄膜在可见光区具有很高的透射率和低的散射或吸收损失。这显示了膜的良好光学质量,并且可用作工业应用中的透明电极。 ZnO薄膜具有直接的带隙跃迁,带隙值介于3.12和3.35 eV之间。随着退火温度的升高,在吸收边缘观察到红移。 ZnO沉积衬底的退火温度导致晶体尺寸和能隙的变化,使其成为光电器件应用的有希望的候选者。

著录项

  • 来源
    《Journal of materials science 》 |2015年第6期| 4257-4264| 共8页
  • 作者单位

    Department of Physics, PSNA College of Engineering and Technology, Dindigul 624 622, India;

    Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;

    Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;

    Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;

    Department of Physics, Anna University Chennai, BIT Campus, Tiruchirappalli 620 024, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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