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机译:直拉硅中氧化物沉淀的载流子散射机理
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
Ningbo QL Electronics Co., Ltd, Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China,Ningbo QL Electronics Co., Ltd, Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
机译:改进的光散射层析成像技术检测的直拉硅晶片中氧气沉淀的最小尺寸
机译:直拉硅中氧沉淀物固定位错:沉淀强化机制的可行性
机译:Czochralski含硅氧化物沉淀物中的自旋依赖性重组
机译:氧化物沉淀对切克劳斯基硅中少数载流子寿命的影响
机译:通过二次谐波产生研究了绝缘体上硅和硅/二氧化硅/氧化镁异质结构中的电荷载流子动力学。
机译:使用固态NMR光谱比较氧化硅和氧化钛共沉淀物中R5肽的二级结构和相互作用的比较
机译:Czochralski含硅氧化物中的自旋相关重组 沉淀物
机译:Czochralski硅基板的快速热处理:缺陷,裸露区域和少数载流子寿命