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Studies on the structural, optical, and electrical properties of jet-nebulized spray pyrolysis ITO thin films

机译:喷射雾化喷雾热解ITO薄膜的结构,光学和电学性质研究

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摘要

In this study, tin-doped indium oxide (ITO) thin films were fabricated via jet-nebulized spray pyrolysis method. The structural, micro structural, and optical properties of the ITO thin films were investigated via X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and scanning electron microscopy (SEM). The XRD patterns of the thin films indicated a preferred orientation along the (222) plane, which ensures the formation of a pure phase with a high degree of crystallinity. The PL analysis showed that the film has a high transmittance of 80 %. The SEM observations showed the formation of dense films with grain sizes in the range of 25-50 nm. The X-ray photo-electron spectroscopy results displayed the single valance state and chemical bonding state of In and Sn in indium tin oxide. The electrical resistivity of the ITO substantially changed with the incorporation of Sn into the In_2O_3 structure. When 10 wt% Sn was added as a dopant, the minimum resistivity was 0.10 Ω-m.
机译:在本研究中,通过喷射雾化喷雾热解法制备了掺锡氧化铟(ITO)薄膜。通过X射线衍射(XRD),紫外可见光谱和扫描电子显微镜(SEM)研究了ITO薄膜的结构,微观结构和光学性质。薄膜的XRD图谱显示了沿(222)平面的最佳取向,这确保了形成具有高结晶度的纯相。 PL分析表明该膜具有80%的高透射率。 SEM观察表明形成了具有在25-50nm范围内的晶粒尺寸的致密膜。 X射线光电子能谱结果显示了铟锡氧化物中In和Sn的单价态和化学键态。 ITO的电阻率随将Sn掺入In_2O_3结构中而发生很大变化。当添加10wt%的Sn作为掺杂剂时,最小电阻率为0.10Ω-m。

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  • 来源
    《Journal of materials science》 |2015年第4期|2531-2537|共7页
  • 作者单位

    Department of Physics, Arumugam Pillai Seethai Ammal College, Tiruppattur, India;

    Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi, India;

    Sustainable Energy and Smart Materials Research Lab, Department of Nanoscience and Technology, Alagappa University, Karaikudi. India;

    Department of Physics, Khadir Mohideen College, Adirampattinam, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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