Investigation on optical, structural and electrical properties of annealed AZO/Al/AZO multilayer structures deposited by DC magnetron sputtering

摘要

In this research paper, a transparent conducting Al doped ZnO (AZO) monolayer and AZO/Al/AZO trilayer films have been successfully deposited on non-ferrous glass substrates by DC magnetron sputtering. The effects of Al film thickness and annealing temperature on resistivity and optical transmittance are characterized and discussed. The annealing treatment of the AZO (50 nm)/Al (10 nm)/ AZO (50 nm) structure presents the best photo-electric performances, improves significantly the resistivity and the transmittance. The maximum figure of merit value achieved is (15.2 × 10~(-4) Ω~(-1)) corresponding at the temperature of 400 ℃.