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首页> 外文期刊>Journal of materials science >Interface-related resistive switching in BiFeO_3 thin films
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Interface-related resistive switching in BiFeO_3 thin films

机译：BiFeO_3薄膜中与界面相关的电阻切换

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摘要

Polycrystalline BiFeO_3 thin films have been grown by pulsed laser deposition on Pt/Ti/SiO_2/Si substrates. The microstructures of the thin films were characterized by X-ray-diffraction and scanning electronic microscopy. The resistive switching in BiFeO_3 thin films has been systematically investigated by current-voltage measurements. It has been observed that the oxygen ambient pressure during the deposition influences the ON/ OFF ratio of the switching. The substrate temperature affects the rectifying behaviour of the thin films, and consequently determines the possibility of resistive switching in BiFeO_3 thin films. By varying the thickness of the thin film, it has been revealed that the switching takes place near the electrode/film interface. The mechanism of the observed resistive switching has been attributed to a charge trapping effect at the interface.
机译：通过在Pt / Ti / SiO_2 / Si衬底上进行脉冲激光沉积，已生长了多晶BiFeO_3薄膜。薄膜的微结构通过X射线衍射和扫描电子显微镜表征。 BiFeO_3薄膜中的电阻转换已通过电流-电压测量进行了系统研究。已经观察到，沉积过程中的氧气环境压力会影响开关的开/关比。基板温度影响薄膜的整流行为，因此确定BiFeO_3薄膜中电阻切换的可能性。通过改变薄膜的厚度，已经揭示出切换发生在电极/薄膜界面附近。观察到的电阻切换的机制已归因于界面处的电荷俘获效应。

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  • 来源
    《Journal of materials science》 |2015年第3期|1727-1731|共5页
  • 作者

    L. Jin; Y. Shuai; H. Z. Zeng; W. B. Luo; C. G. Wu; W. L. Zhang; X. Q. Pan; P. Zhang; Y. R. Li;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

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