...
机译:具有AlGaN杂质阻挡层的低漏电流和高击穿电压GaN-on-Si(111)系统
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China,State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China,State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
School of Electronics and Information Technology, Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China,Institute of Power Electronics and Control Technology, Sun Yat-sen University, Xin-Gang-Xi Rd.135, Guangzhou 510275, People's Republic of China,State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, People's Republic of China;
机译:高击穿电压和低漏电流Ga / sub 0.51 / In / sub 0.49 / P / In / sub 0.15 / Ga / sub 0.85 / As拟态HEMT的温度相关研究
机译:具有MIS门控混合阳极的高反向阻断和低启动电压AlGaN / Si-GaN侧向功率二极管
机译:具有AlN /的高压(600V)低泄漏低电流塌陷AlGaN / GaN HEMTs
机译:用于高击穿和低泄漏操作的AlGaN / GaN异质结FET
机译:深度紫外线阵列LED电致发光的温度依赖性和电流 - 电压特性
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:用于封闭杂质带远红外探测器的超纯锗外延层的开发。