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Thickness dependent mechanical and ferroelectric properties of Bi_4Ti_3O_(12) film

机译:Bi_4Ti_3O_(12)膜的厚度取决于机械和铁电性能

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摘要

In this paper, we analyze and explain the thickness dependent microstructure, surface morphology evolution, mechanical and electrical properties of lead free bismuth titanate film of molecular formula Bi_4Ti_3O_(12) (BIT). BIT films are grown by chemical solution deposition on Pt(111)/SiO_2/Si substrate. X-ray diffraction (XRD) studies revealed orthorhombic structure and (117) orientation of BIT film which remains unchanged with thickness variation of the films. The Young's modulus and hardness shows improved properties in 1 μm BIT film which is 100.36 and 5.09 GPa respectively. Both the remanent and spontaneous polarization value enhanced upon building the thickness of BIT film up to 2 μm. The remanent and spontaneous polarization of 2 μm BIT film is observed to be 22.79 and 37.87 μC/cm~2. BIT films showed excellent fatigue resistance against polarization reversal over 10~6 cycles of repetitions.
机译:在本文中,我们分析和解释了分子式Bi_4Ti_3O_(12)(BIT)的无铅钛酸铋薄膜的厚度依赖性微观结构,表面形貌演变,机械和电性能。通过化学溶液沉积在Pt(111)/ SiO_2 / Si衬底上生长BIT膜。 X射线衍射(XRD)研究表明BIT膜的正交结构和(117)取向随膜的厚度变化而保持不变。杨氏模量和硬度在1μmBIT膜中分别显示了100.36和5.09 GPa的改进性能。建立BIT膜的厚度达到2μm时,剩余极化值和自发极化值都会提高。观察到2μmBIT膜的剩余极化和自发极化分别为22.79和37.87μC/ cm〜2。 BIT膜在10〜6个重复循环中显示出优异的抗极化反转疲劳强度。

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  • 来源
    《Journal of materials science 》 |2016年第4期| 4062-4067| 共6页
  • 作者单位

    Materials Science Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India;

    Materials Science Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India;

    Materials Science Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India;

    Materials Science Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India;

    Materials Science Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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