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首页> 外文期刊>Journal of materials science >Effect of CaO content on structure and properties of low temperature co-fired glass-ceramic in the Li_2O-Al_2O_3-SiO_2 system
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Effect of CaO content on structure and properties of low temperature co-fired glass-ceramic in the Li_2O-Al_2O_3-SiO_2 system

机译:CaO含量对Li_2O-Al_2O_3-SiO_2体系中低温共烧玻璃陶瓷结构和性能的影响

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摘要

Glass-ceramics based on the Li_2O-Al_2O_3-SiO_2 system were synthesized by the conventional melt-quenching technology. The glass-ceramics were designed based on silicon oxide replacement with simultaneous increasing calcium oxide. The effects of CaO on the microstructure, densification, thermal, dielectric and mechanical properties of the glass-ceramics were investigated. This glass-ceramic has a low softening point and could be sintered at a low temperature of 800 ℃. The addition of CaO promotes the formation of the CaMgSi_2O_6 phase and could improve the microstructure, densification and mechanical property. The coefficient of thermal expansion of the glass-ceramic increases with the content of CaO and could match that of silicon chips. The sample LAS2 (2.1 wt% CaO) sintered at 800 ℃ for 0.5 h exhibits excellent properties: high density of 2.48 g/cm~3, low dielectric constant of 6.8 and loss of 3.7 × 10~(-3), high three point bending strength of 154 MPa, and low CTE value of 1.9 × 10~(-6)/℃.
机译:采用常规的熔融淬火技术合成了基于Li_2O-Al_2O_3-SiO_2体系的玻璃陶瓷。该玻璃陶瓷的设计是基于氧化硅的替代,同时增加了氧化钙。研究了CaO对微晶玻璃的微观结构,致密化,热,介电和力学性能的影响。这种玻璃陶瓷的软化点低,可以在800℃的低温下烧结。 CaO的添加促进了CaMgSi_2O_6相的形成,并可以改善其微观结构,致密化和力学性能。微晶玻璃的热膨胀系数随CaO含量的增加而增加,可以与硅芯片相匹配。 LAS2(2.1 wt%CaO)样品在800℃烧结0.5 h具有良好的性能:高密度2.48 g / cm〜3,低介电常数6.8和损耗3.7×10〜(-3),高三点弯曲强度为154 MPa,低CTE值为1.9×10〜(-6)/℃。

著录项

  • 来源
    《Journal of materials science》 |2016年第3期|2455-2459|共5页
  • 作者单位

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China,State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, China,National Engineering Research Center of Electromagnetic Radiation Control Materials, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China,State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, China,National Engineering Research Center of Electromagnetic Radiation Control Materials, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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