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Oxidation mode on charge transfer mechanism in formation of Mn-Co-Ni-O spinel films by RF sputtering

机译:射频溅射形成Mn-Co-Ni-O尖晶石薄膜中电荷转移机理的氧化模式

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摘要

Series of negative temperature coefficient Mn-Co-Ni-O spinel oxide thin films were successfully prepared on thermally oxidized SiO_2/Si (100) substrates by RF sputtering a Mn-Co-Ni metal alloy target with the sputtering gas of different Ar:O_2 partial pressure ratios. The crystallinity of the spinel films was improved as O_2 contents increased. The film conductivity was reduced. The minute variation in an optical absorption peak at around 1.7 eV by spectroscopic ellipsometry may be ascribed to the different charge transfer mechanism between Co~(2+) in tetragonal and Co~(3+) in octahedral or between O~(2−) and Mn~(4+) in octahedral sites. Raman and XPS results provided further evidences.
机译:通过用不同Ar:O_2的溅射气体对Mn-Co-Ni金属合金靶进行RF溅射,在热氧化的SiO_2 / Si(100)衬底上成功制备了一系列负温度系数Mn-Co-Ni-O尖晶石氧化物薄膜。分压比。随着O_2含量的增加,尖晶石薄膜的结晶度提高。膜电导率降低。椭圆偏振光谱法在1.7 eV附近的光吸收峰的微小变化可能归因于四面体的Co〜(2+)和八面体的Co〜(3+)或O〜(2-−)之间的不同电荷转移机制和Mn〜(4+)在八面体位置。拉曼和XPS结果提供了进一步的证据。

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  • 来源
    《Journal of materials science》 |2017年第18期|13659-13664|共6页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China,Department of Physics, Shihezi University, Shihezi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China,Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA, United States;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China;

    College of Electronic Engineering, Chengdu Technological University, Chengdu, China;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi, China;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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