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The sputtering target for the oxidation film formation being the sputtering target for the oxidation film formation which consists of the Nb

机译:氧化膜形成用溅射靶是由Nb构成的氧化膜形成用溅射靶。

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target with which the production efficiency of an Nb oxide film and eventually an optical thin film etc., can be enhanced by improving the deposition rate of the Nb oxide film when the Nb oxide film appropriate for the optical thin film is deposited by sputtering.;SOLUTION: The sputtering target is composed of an Nb material. The Nb material constituting the sputtering target contains hydrogen of a range from 1 to 1,000 ppm. Further, the variation in the hydrogen content over the entire part of the target is confined to ≤20%.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种溅射靶,当适合于该Nb氧化物膜时,通过提高Nb氧化物膜的沉积速率,可以提高Nb氧化物膜以及最终光学薄膜等的生产效率。通过溅射沉积光学薄膜。解决方案:溅射靶材由Nb材料组成。构成溅射靶的Nb材料包含1至1,000ppm的氢。此外,靶标整个部分的氢含量变化限制在20%以内。版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP4398691B2

    专利类型

  • 公开/公告日2010-01-13

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP20030334897

  • 发明设计人 石上 隆;渡邊 光一;鈴木 幸伸;

    申请日2003-09-26

  • 分类号C23C14/34;C22C27/02;C23C14/08;G02B1/11;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:26

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