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Effects of compound coupling agents on the properties of PTFE/SiO_2 microwave composites

机译:复合偶联剂对PTFE / SiO_2微波复合材料性能的影响

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摘要

PTFE-based microwave composites filled with SiO_2 dielectric ceramic (PTFE/SiO_2) were prepared by powder processing technique followed by hot pressing. The effects of compound coupling agent on the contact angle and surface energy of SiO_2 filler, as well as moisture absorption, dielectric properties, temperature coefficient of dielectric constant (τ_ε) and coefficient of thermal expansion (CTE) of the PTFE/SiO_2 composites were investigated. The content of SiO_2 in PTFE/SiO_2 composites was maintained as 57 wt%. SiO_2 powders were pre-treated by the mixture of phenyltrimethoxysilane (Z6124) and amino-propyltriethoxysilane (KH550) coupling agents before mixing and reacting with PTFE. The compositions of the coupling agents mixture are x% KH550 + (1.5 — x)% Z6124 (x: mass ratio to SiO_2, x = 0, 0.15, 0.3, 0.45, 0.6, 0.75, 1.5). The results show that as the content of KH550 and Z6124 is 0.3 and 1.2 wt%, respectively, the modified SiO_2 filler has a maximum value of contact angle, at the same time the composites achieve a most compact structure with a maximum density of 2.031 g/cm~3. Moreover, improved properties, including dielectric constant (ε_r) of 2.83, dielectric loss (tan 8) of 7.4 x 10~(-4), CTE of 28.81 ppm/℃ and temperature coefficient of dielectric constant (τ_ε) of 22.8, are obtained. The ratio of experimental and theoretical dielectric constant values is 96.97%. It has been found that the compound coupling agent (KH550 and Z6124 are 0.3 and 1.2 wt%, respectively) results in improved performance of the composites than that of previous reported work.
机译:通过粉末加工技术,然后进行热压,制备了填充有SiO_2介电陶瓷(PTFE / SiO_2)的PTFE基微波复合材料。研究了复合偶联剂对SiO_2填料接触角和表面能的影响,以及PTFE / SiO_2复合材料的吸湿率,介电性能,介电常数温度系数(τ_ε)和热膨胀系数(CTE)。 。 PTFE / SiO_2复合材料中的SiO_2含量保持在57wt%。在混合并与PTFE反应之前,先用苯基三甲氧基硅烷(Z6124)和氨基丙基三乙氧基硅烷(KH550)偶联剂的混合物对SiO_2粉进行预处理。偶联剂混合物的组成为x%KH550 +(1.5-x)%Z6124(x:与SiO 2的质量比,x = 0、0.15、0.3、0.45、0.6、0.75、1.5)。结果表明,当KH550和Z6124的含量分别为0.3和1.2 wt%时,改性的SiO_2填料具有最大的接触角值,同时复合材料获得最致密的结构,最大密度为2.031 g /厘米〜3。此外,获得了改善的性能,包括介电常数(ε_r)为2.83,介电损耗(tan 8)为7.4 x 10〜(-4),CTE为28.81 ppm /℃和介电常数温度系数(τ_ε)为22.8。 。实验介电常数与理论介电常数之比为96.97%。已经发现,该化合物偶联剂(KH550和Z6124分别为0.3和1.2wt%)导致复合材料的性能比以前报道的工作更高。

著录项

  • 来源
    《Journal of materials science》 |2017年第4期|3356-3363|共8页
  • 作者单位

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China , State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

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