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Effects of perfluorooctyltriethoxysilane coupling agent on the properties of silica filled PTFE composites

机译:全氟辛基三乙氧基硅烷偶联剂对二氧化硅填充的PTFE复合材料性能的影响

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摘要

Fused amorphous SiO_2 filled polytetrafluoro-ethylene (PTFE) microwave substrate composites were manufactured. The composition of all the samples was 57 wt% SiO_2 and 43 wt% PTFE. The effects of compound silane coupling agents on the properties of the SiO_2 filled PTFE composites were investigated, including density, water absorption, dielectric properties and temperature coefficient of dielectric constant. Compound coupling agents x wt% KH550+ (1.5-x) wt% F8261 (x: mass ratio to SiO_2 ceramic, x = 0, 0.2, 0.4, 0.6, 0.8, 1.0) were used to pre-treat SiO_2 fillers and the performance of composites were improved with appropriate amounts of coupling agents. The SEM results show that SiO_2 particles modified with compound coupling agents are well dispersed in PTFE polymer and exhibit a strong connection with PTFE. The dielectric constant of all the composites shows excellent frequency stability within the frequency from 1 to 18 GHz. The SiO_2 ceramic filler modified with 1.1 wt% F8261 and 0.4 wt% KH550 simultaneously has the highest contact angle and the lowest surface energy, besides, the composite achieves a most compact structure with a maximum density of 2.059 g/cm3. At the same time, this composite obtains optimal properties, including good dielectric properties (ε_r~2.89, tanδ~0.0007), acceptable water absorption of 0.2%, temperature coefficient of dielectric constant (τ_ε) of 32.32 ppm/℃. Moreover, the ratio of experimental and theoretical dielectric constant can achieve 98.86%, which is far greater than that in previous reports.
机译:制备了无定形SiO_2填充的聚四氟乙烯(PTFE)微波基材复合材料。所有样品的组成为57重量%的SiO 2和43重量%的PTFE。研究了复合硅烷偶联剂对SiO_2填充PTFE复合材料性能的影响,包括密度,吸水率,介电性能和介电常数温度系数。使用化合物偶联剂x wt%KH550 +(1.5-x)wt%F8261(x:与SiO_2陶瓷的质量比,x = 0、0.2、0.4、0.6、0.8、1.0)预处理SiO_2填料和适量的偶联剂可改善复合材料的性能。 SEM结果表明,用复合偶联剂改性的SiO_2颗粒可以很好地分散在PTFE聚合物中,并与PTFE具有很强的连接性。所有复合材料的介电常数在1至18 GHz的频率范围内均显示出出色的频率稳定性。用1.1 wt%的F8261和0.4 wt%的KH550改性的SiO_2陶瓷填料同时具有最高的接触角和最低的表面能,此外,该复合材料还实现了最紧凑的结构,最大密度为2.059 g / cm3。同时,该复合材料获得了最佳性能,包括良好的介电性能(ε_r〜2.89,tanδ〜0.0007),可接受的吸水率为0.2%,介电常数温度系数(τ_ε)为32.32 ppm /℃。而且,实验介电常数与理论介电常数之比可以达到98.86%,远远大于以前的报道。

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  • 来源
    《Journal of materials science》 |2017年第12期|8810-8817|共8页
  • 作者单位

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, People's Republic of China;

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