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Effects of SiO_2/Cr_2O_3 ratios on microstructures and electrical properties of high voltage gradient ZnO varistors

机译:SiO_2 / Cr_2O_3比对高压梯度ZnO压敏电阻微结构和电性能的影响

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摘要

The effect of various proportions of SiO2 and Cr2O3 doping on the micro-characteristics and the electrical properties of the ZnO varistors were investigated. As the SiO2/Cr2O3 ratio increased, the voltage gradient increased and then decreased, the nonlinear coefficient alpha increased, while the leakage current showed the opposite trend, meanwhile the residual voltage ratio was almost stable. When the SiO2/Cr2O3 ratio was 1.7mol% vs. 0.6mol%, the ZnO varistors sintered at 1155 degrees C exhibited excellent comprehensive electrical properties with voltage gradient of 329.9V/mm, nonlinear coefficient of 65.1, leakage current of 0 mu A, residual voltage ratio of 1.663, and aging starting power of 0.72W. The varistors were in good condition after being struck 18 times of 250A square wave energy pulse impact, showing a great potential in the industrial application of power distribution systems.
机译:研究了不同比例的SiO2和Cr2O3掺杂对ZnO压敏电阻微特性和电性能的影响。随着SiO2 / Cr2O3比值的增加,电压梯度先增大后减小,非线性系数α增大,而漏电流呈现相反的趋势,而残余电压比几乎稳定。当SiO2 / Cr2O3比为1.7mol%对0.6mol%时,在1155℃下烧结的ZnO压敏电阻具有优异的综合电性能,电压梯度为329.9V / mm,非线性系数为65.1,泄漏电流为0μA,剩余电压比为1.663,老化启动功率为0.72W。压敏电阻在受到250A方波能量脉冲冲击的18次冲击后处于良好状态,在配电系统的工业应用中显示出巨大的潜力。

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  • 来源
    《Journal of materials science》 |2019年第13期|12113-12121|共9页
  • 作者单位

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

    Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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