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Morphological transformations induced by Co impurity in ZnO nanostructures prepared by rf-sputtering and their physical properties

机译:射频溅射制备的ZnO纳米结构中Co杂质引起的形貌转变及其物理性质

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摘要

Growth of uniform and vertically well aligned nanorods is a difficult process and becomes more complicated in case of ZnO nanorods on silicon (Si) substrate due to thermal instability of the Si substrate and large lattice mismatch (~ 40%) between the substrate and the ZnO nanorods array. Growth of ZnO nanorods assisted by metal ion via rf-sputtering is a good technique; however, it needs many parameters to be controlled for desired growth and morphology of nanostructures. In this work, we report the morphological transformations of ZnO nanostructured thin film by simply controlling the concentration of Cobalt (Co) impurity in sputtering target. With the introduction of Co ions in ZnO matrix, the initial coalescence grain structure (pyramidal morphology) changes into columnar grains and as the concentration of Co ions increases further, a highly oriented ZnO nanorods array is obtained. The possible mechanism with the help of schematic diagram is also proposed for the morphological transformation of ZnO nanostructures. The vertically aligned nanorods show good optical properties as well as robust ferromagnetism at room temperatures. It has also been observed that with the dopant conc. increasing there was a significant decrease in the band gap energy. The structure and morphology of rf-sputtered nanostructured thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. Interestingly, with Co conc. increasing in ZnO matrix results in decreasing LO modes in Raman spectroscopy. It can have strong influence on the magnetic properties of the material. The good optical and strong ferromagnetic properties of the ZnO nanorods, suggest its possible applications in the fields of lasers, spintronics and medical applications.
机译:由于硅衬底的热不稳定性以及衬底与ZnO之间的大晶格失配(〜40%),在硅(Si)衬底上生长ZnO纳米棒时,均匀且垂直排列良好的纳米棒的生长是一个困难的过程,并且变得更加复杂。纳米棒阵列。金属离子辅助的射频溅射生长ZnO纳米棒是一种很好的技术。然而,它需要控制许多参数以实现所需的纳米结构生长和形态。在这项工作中,我们通过简单地控制溅射靶中钴(Co)杂质的浓度来报告ZnO纳米结构薄膜的形貌转变。随着Co离子在ZnO基体中的引入,初始的聚结晶粒结构(金字塔形)变成柱状晶粒,并且随着Co离子浓度的进一步增加,获得了高度取向的ZnO纳米棒阵列。还提出了利用示意图的可能机理,用于ZnO纳米结构的形态转化。垂直排列的纳米棒在室温下显示出良好的光学性能以及强大的铁磁性。还已经观察到掺杂剂浓。增加,带隙能量显着降低。通过X射线衍射,场发射扫描电子显微镜,透射电子显微镜和选择区域电子衍射研究了射频溅射纳米结构薄膜的结构和形貌。有趣的是,与公司一致。 ZnO基质的增加导致拉曼光谱中LO模式的降低。它会对材料的磁性能产生强烈影响。 ZnO纳米棒具有良好的光学性能和强铁磁性能,表明其在激光,自旋电子学和医疗应用领域的可能应用。

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