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Electrochemical, microstructural, compositional and optical characterization of copper oxide and copper sulfide thin films

机译:氧化铜和硫化铜薄膜的电化学,微观结构,组成和光学表征

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摘要

In this work, we have focused the effect of substrate on electrochemically grown copper oxide and copper sulfide thin films. The prepared films have been subjected to X-ray diffraction, scanning electron microscopy, Energy dispersive X-ray analysis, UV–Visible spectroscopic techniques for the determination crystalline nature, morphology, composition and optical properties. X-ray diffraction results indicated the deposited films exhibited cubic structure with most reflection along (110), (220) planes for copper oxide and copper sulfide. Scanning electron microscopy along with energy dispersive analysis by X-rays showed that films with uniform morphology and nearly stoichiometry have been obtained for film obtained on SnO~(2)substrate. Optical absorption and transmittance measurements showed that the deposited films exhibited band gap value of 2.28 and 2.45 eV for copper oxide and copper sulfide.
机译:在这项工作中,我们集中了基板对电化学生长的氧化铜和硫化铜薄膜的影响。制备的薄膜经过X射线衍射,扫描电子显微镜,能量色散X射线分析,UV-可见光谱技术测定晶体性质,形态,组成和光学性质。 X射线衍射结果表明,对于氧化铜和硫化铜,沉积的膜表现出立方结构,并沿(110),(220)面反射最多。扫描电子显微镜和X射线能量色散分析表明,在SnO〜(2)衬底上获得的薄膜已经获得了具有均匀形态和接近化学计量的薄膜。光学吸收和透射率测量表明,对于氧化铜和硫化铜,沉积膜的带隙值为2.28和2.45 eV。

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  • 来源
    《Journal of materials science》 |2018年第18期|15529-15534|共6页
  • 作者单位

    Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences;

    Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences;

    School of Physics, Alagappa University;

    School of Physics, Alagappa University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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