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Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation

机译:Ag离子注入获得的基于HgCdTe的复合结构的光学表征

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摘要

The results concerning the formation of nano-scale patterns on the surface of a ternary compound are presented. The evolution of surface morphology of (111) Hg~(1−x)Cd~(x)Te (MCT) (х ~ 0.223) epilayers due to ion irradiation in the energy range of 100–140 keV was studied. Modification of the surface was performed using the method of normal ( θ  = 0°) and oblique—incidence ( θ  = 45°) bombardment by Ag_(+)ions. Surface characteristics were investigated using atomic force microscopy and X-ray photoelectron spectroscopy techniques. Low-temperature photoluminescence and Raman spectroscopy were used for the investigation of the recombination and vibrational properties as well as the defect-impurity states of as-grown and implanted Hg~(0.777)Cd~(0.223)Te epilayers. It was found that ion beam structured regions of MCT surface demonstrate photoluminescence emission in the range of 500–850 nm, with intense peaks at around 733 nm (1.69 eV) and 570 nm (2.16 eV) with a long-wavelength shoulder at 620 nm (2 eV). The observed emission lines are suggested to be mainly related to the presence of various point defects in oxide phases (CdO and Ag~(2)O) induced by ion bombarding in the base material (HgCdTe).
机译:给出了关于在三元化合物表面上形成纳米级图案的结果。研究了在100-140keV能量范围内离子辐照引起的(111)Hg〜(1-x)Cd〜(x)Te(MCT)(х〜0.223)外延层表面形貌的演变。表面的改性是使用法线(θ= 0°)和斜入射(θ= 45°)通过Ag _(+)离子轰击进行的。使用原子力显微镜和X射线光电子能谱技术研究了表面特性。用低温光致发光和拉曼光谱研究了生长和注入的Hg〜(0.777)Cd〜(0.223)Te外延层的复合和振动性能以及缺陷杂质状态。研究发现,MCT表面的离子束结构区域在500-850 nm范围内显示出光致发光发射,在733 nm(1.69 eV)和570 nm(2.16 eV)处有强烈的峰值,在620 nm处有长波长的肩峰(2 eV)。建议观察到的发射线主要与基体材料(HgCdTe)中的离子轰击引起的氧化物相(CdO和Ag〜(2)O)中各种点缺陷的存在有关。

著录项

  • 来源
    《Journal of materials science》 |2018年第18期|15708-15714|共7页
  • 作者单位

    V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine;

    V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine;

    Institute of Physics, Polish Academy of Science;

    Departamento de Física, Instituto Politécnico Nacional – ESFM;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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