Parameter extraction of gate tunneling current in metal-insulator-semiconductor capacitors based on ultra-thin atomic-layer deposited Al_2O_3

摘要

Metal–insulator–semiconductor devices were fabricated using ultra-thin (6 nm) atomic layer deposited Al~(2)O~(3). From Ig–Vg measurements, it was determined that the main conduction mechanisms for these devices are Ohmic conduction at very low electric fields (E   2 MV cm_(−1)) and finally, just before breakdown, Fowler–Nordheim (E > 5 MV cm_(−1)). From the accurate verification of these conduction mechanisms, physical parameters such as barrier height (Φ~(B)), effective mass (m*) and energy trap level (Φ~(T)) are extracted and could be used to effectively understand the performance and reliability of these devices under different substrate injection conditions.