Development of p-type microcrystalline silicon carbon alloy films by the very high frequency plasma-enhanced chemical vapor deposition technique

摘要

We developed p-type μc-silicon carbon alloy thin films by the very high frequency plasma-enhanced chemical vapour deposition technique using a SiH_4, H_2, and B_2H_6 gas mixture at low power (55 mW/cm~2) and low substrate temperatures (150-250 deg. C).