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Diffusion characteristics study of locally Er-doped noncongruent, Li-deficient Ti:Er:LiNbO_3 strip waveguide

机译:局部掺Er的非全相,Li不足的Ti:Er:LiNbO_3带状波导的扩散特性研究

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摘要

Locally Er~(3+)-doped noncongruent, Li-deficient Ti:Er:LiNbO_3 strip waveguide was fabricated with a technological process in sequence of preparation of Li-deficient LiNbO_3 substrate using Li-poor vapor transport equilibration (VTE), Er~(3+), and Ti~(4+) diffusion in wet O_2. The Li_2O content change was evaluated from the measured birefringence. The Ti~(4+) and Er~(3+) profile characteristics in the waveguide were studied by secondary ion mass spectrometry. The results show that the VTE and subsequent Er~(3+) diffusion procedures resulted in totally ~0.8 mol% Li_2O content reduction. The Ti~(4+) profile follows a sum of two error functions in the width direction and a Gaussian function in the depth direction of waveguide. The Er~(3+) profile follows also a Gaussian function. At 1130 ℃, the Ti~(4+) surface/depth diffusivity and surface concentration are 8.5 ± 1.3/1.98 ± 0.06 μm~2/h and ~7 mol%, respectively, and the Er~(3+) diffusivity and surface concentration are (12.8 ± 0.3) × 10~(-2) μm~2/h and ~0.6 mol%, respectively.
机译:采用工艺流程,利用贫锂离子输运平衡法(VTE),依次制备了缺锂的LiNbO_3衬底,并按工艺制作了局部掺Er〜(3+)的,缺Li的Ti:Er:LiNbO_3条形波导。 (3+)和Ti〜(4+)在湿O_2中的扩散。从测得的双折射评价Li_2O含量变化。通过二次离子质谱研究了波导中的Ti〜(4+)和Er〜(3+)轮廓特征。结果表明,VTE和随后的Er〜(3+)扩散过程导致Li_2O的含量降低约0.8mol%。 Ti〜(4+)轮廓在波导的宽度方向上服从两个误差函数,在波导的深度方向上服从高斯函数。 Er〜(3+)曲线也遵循高斯函数。在1130℃时Ti〜(4+)的表面/深度扩散系数和表面浓度分别为8.5±1.3 / 1.98±0.06μm〜2 / h和〜7 mol%,Er〜(3+)的扩散系数和表面浓度分别为(12.8±0.3)×10〜(-2)μm〜2 / h和〜0.6 mol%。

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  • 来源
    《Journal of Materials Research》 |2011年第23期|p.2924-2930|共7页
  • 作者单位

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Optoelectronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China Department of Electronic Engineering, City University of Hong Kong,Kowloon, Hong Kong, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Optoelectronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China Department of Electronic Engineering, City University of Hong Kong,Kowloon, Hong Kong, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Optoelectronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China Department of Electronic Engineering, City University of Hong Kong,Kowloon, Hong Kong, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Optoelectronic Information Technology, Tianjin University, Ministry of Education, Tianjin 300072, People's Republic of China Department of Electronic Engineering, City University of Hong Kong,Kowloon, Hong Kong, People's Republic of China;

    Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

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