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Kinetic study of the intermetallic compound formation between eutectic Sn-3.5Ag alloys and electroplated Ni metallization in flip-chip solder joints

机译:Sn-3.5Ag共晶金属与倒装芯片焊点电镀Ni金属化之间形成金属间化合物的动力学研究

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摘要

Ni-based under-bump metallization (UBM) has attracted wide attention due to its low reaction rate with Sn, compared with Cu and Cu alloy. In this study, the interfacial reactions between eutectic Sn-3.5Ag solder and Ni-based UBM, including electroplated Ni (EP-Ni) and electroless Ni (EL-Ni) are investigated. Morphology and growth kinetics of Ni_3Sn_4 intermetallic compounds are studied at different reflow temperatures and durations. The growth rate and the growth activation energy of Ni_3Sn_4 were measured for the two sets of samples. The activation energies are measured to be 25 kJ/mol and 38 kJ/mol for the Ni_3Sn_4 growth on EP-Ni and EL-Ni, respectively. The Ni_3Sn_4 on EP-Ni UBMs shows a slower growth rate and the Ni_3Sn_4/solder interface is void free even after 20-min reflow at 240 ℃. On the other hand, the interface of Ni_3Sn_4/EL-Ni has a lot of microvoids after reflowing at 240 ℃ for 20 min.
机译:镍基凸点下金属化(UBM)由于与铜和铜合金相比与锡的反应速率低而受到广泛关注。在这项研究中,研究了共晶Sn-3.5Ag焊料与Ni基UBM之间的界面反应,包括电镀Ni(EP-Ni)和化学镀Ni(EL-Ni)。研究了Ni_3Sn_4金属间化合物在不同回流温度和持续时间下的形貌和生长动力学。测定两组样品的Ni_3Sn_4的生长速率和生长活化能。对于在EP-Ni和EL-Ni上生长的Ni_3Sn_4,活化能经测量分别为25kJ / mol和38kJ / mol。 EP-Ni UBM上的Ni_3Sn_4的生长速度较慢,即使在240℃回流20分钟后,Ni_3Sn_4 /焊料界面也没有空隙。另一方面,Ni_3Sn_4 / EL-Ni的界面在240℃回流20分钟后有许多微孔。

著录项

  • 来源
    《Journal of Materials Research》 |2012年第8期|p.1169-1177|共9页
  • 作者

    Hsiao-Yun Chen; Chin Chen;

  • 作者单位

    Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010,Republic of China;

    Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010,Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:14:06

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